svf5n60t/f/d/mj_datasheet 5a, 600v n-channel mosfet general description svf5n60t/f/d/mj is an n-channel enhancement mode power mos field effect transistor which is produced using silan proprietary f-cell tm structure vdmos technology. the improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are widely used in ac-dc power suppliers, dc- dc converters and h-bridge pwm motor drivers. features ? 5a,600v,r ds(on) typ =1.88 @v gs =10v ? low gate charge ? low crss ? fast switching ? improved dv/dt capability nomenclature ordering information part no. package marking material packing svf5n60t to-220-3l svf5n60t pb free tube svf5n60f to-220f-3l svf5n60f pb free tube svf5n60d to-252-2l svf5n60d pb free tube SVF5N60DTR to-252-2l svf5n60d pb free tape & reel svf5n60mj to-251j-3l svf5n60mj pb free tube hangzhou silan microelectronics co.,ltd rev:1.2 2011.09.13 http://www.silan.com.cn page 1 of 10
svf5n60t/f/d/mj_datasheet hangzhou silan microelectronics co.,ltd rev:1.2 2011.09.13 http://www.silan.com.cn page 2 of 10 absolute maximum ratings (tc=25 c unless otherwise noted) ratings characteristics symbol svf5n60t/d/mj svf5n60f unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v t c =25c 5 drain current t c =100c i d 3.1 a drain current pulsed i dm 20 a 120 40 w power dissipation(t c =25 c) -derate above 25 c p d 0.96 0.32 w/ c single pulsed avalanche energy (note 1) e as 242 mj operation junction temperature range t j -55 +150 c storage temperature range t stg -55 +150 c thermal characteristics ratings characteristics symbol svf5n 60t svf5n 60d svf5n 60mj svf5n 60f unit thermal resistance, junction-to-case r jc 1.04 1.04 1.00 3.13 c/w thermal resistance, junction-to-ambient r ja 62.5 110 110 120 c/w electrical characteristics (t c =25 c unless otherwise noted) characteristics symbol test conditions min. typ. max. unit drain -source breakdown voltage b vdss v gs =0v, i d =250a 600 -- -- v drain-source leakage current i dss v ds =600v, v gs =0v -- -- 1.0 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold voltage v gs(th) v gs = v ds , i d =250a 2.0 -- 4.0 v static drain- source on state resistance r ds(on) v gs =10v, i d =2.5a -- 1.88 2.15 input capacitance c iss -- 479.8 -- output capacitance c oss -- 62.7 -- reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz -- 2.1 -- pf turn-on delay time t d(on) -- 14.93 -- turn-on rise time t r -- 28.40 -- turn-off delay time t d(off) -- 28.27 -- turn-off fall time t f v dd =300v,i d =5.0a, r g =25 (note 2,3) -- 21.73 -- ns total gate charge q g -- 9.27 -- gate-source charge q gs -- 2.79 -- gate-drain charge q gd v ds =480v,i d =5.0a, v gs =10v (note 2,3) -- 3.37 -- nc
svf5n60t/f/d/mj_datasheet hangzhou silan microelectronics co.,ltd rev:1.2 2011.09.13 http://www.silan.com.cn page 3 of 10 source-drain diode ratings and characteristics characteristics symbol test conditions min. typ. max. unit continuous source current i s -- -- 5 pulsed source current i sm integral reverse p-n junction diode in the mosfet -- -- 20 a diode forward voltage v sd i s =5.0a,v gs =0v -- -- 1.4 v reverse recovery time t rr -- 190 -- ns reverse recovery charge q rr i s =5.0a,v gs =0v, di f /dt=100a/s -- 0.53 -- c notes: 1. l=30 mh, i as =3.78a, v dd =70v, r g =25 ,starting t j =25 c; 2. pulse test: pulse width 300 s,duty cycle 2%; 3. essentially independent of operating temperature.
svf5n60t/f/d/mj_datasheet typical characteristics hangzhou silan microelectronics co.,ltd rev:1.2 2011.09.13 http://www.silan.com.cn page 4 of 10
svf5n60t/f/d/mj_datasheet typical characteristics(continued) hangzhou silan microelectronics co.,ltd rev:1.2 2011.09.13 http://www.silan.com.cn page 5 of 10 0.8 0.9 1.1 1.0 -100 -50 0 50 100 200 drain-source breakdown voltage(normalized) C b vdss (v) junction temperature C t j (c) figure 7. breakdown voltage variation vs. temperature drain-source on-resistance (normalized) C r ds(on) ( ?) figure 8. on-resistance variation vs. temperature junction temperature C t j (c) 1.2 150 notes: 1. v gs =0v 2. i d =250a 0.0 0.5 2.0 1.5 -100 -50 0 50 100 200 3.0 150 1.0 2.5 notes: 1. v gs =10v 2. i d =2.5a drain current - i d (a) figure 9-1. max. safe operating area(svf5n60t/d/mj) drain source voltage - v ds (v) drain current - i d (a) figure 9-2. max. safe operating area(svf5n60f) drain source voltage - v ds (v) 25 50 75 100 125 150 0 1 2 4 5 figure 10. maximum drain current vs. case temperature drain current - i d (a) case temperature C t c (c) 3 dc 10ms 1ms 100s 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 10 2 operation in this area is limited by r ds(on) notes: 1.t c =25c 2.t j =150c 3.single pulse dc 10ms 1ms 100s 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 10 2 operation in this area is limited by r ds(on) notes: 1.t c =25c 2.t j =150c 3.single pulse
svf5n60t/f/d/mj_datasheet typical test circuit v gs 10v charge 12v 50k 300nf same type as dut dut v gs hangzhou silan microelectronics co.,ltd rev:1.2 2011.09.13 http://www.silan.com.cn page 6 of 10 3ma v ds qg qgs qgd gate charge test circuit & waveform resistive switching test circuit & waveform v ds v gs r g r l v dd 10v v ds v gs 10% 90% td(on) t on tr td(off) t off t f unclamped inductive switching test circuit & waveform v ds r g v dd 10v l tp i d b vdss i as v dd tp time v ds(t) i d(t) e as = 1 - 2 li as 2 b vdss b vdss v dd dut dut 200nf
svf5n60t/f/d/mj_datasheet package outline to-220f-3l(1) unit: mm 3.300.25 4.720.30 10.030.30 hangzhou silan microelectronics co.,ltd rev:1.2 2011.09.13 http://www.silan.com.cn page 7 of 10 2.800.30 2.550.25 15.750.50 9.800.50 2.54 type 1.47max 0.800.15 0.500.15 15.800.50 6.700.30 3.200.20 to-220f-3l(2) unit: mm
svf5n60t/f/d/mj_datasheet package outline (continued) to-252-2l unit: mm to-220-3l unit: mm hangzhou silan microelectronics co.,ltd rev:1.2 2011.09.13 http://www.silan.com.cn page 8 of 10
svf5n60t/f/d/mj_datasheet package outline (continued) to-251j-3l unit: mm disclaimer: ? silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor products malfunction or fail with some probability under special conditions. when using silan products in system design or complete machine manuf acturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such silan products could cause loss of body injury or damage to property. ? silan will supply the best possible product for customers! hangzhou silan microelectronics co.,ltd rev:1.2 2011.09.13 http://www.silan.com.cn page 9 of 10
svf5n60t/f/d/mj_datasheet hangzhou silan microelectronics co.,ltd rev:1.2 2011.09.13 http://www.silan.com.cn page 10 of 1 0 attachment revision history date rev description page 2011.02.11 1.0 original 2011.07.04 1.1 add the package of to-251j-3l 2011.09.13 1.2 update the pac kage outline of to-220-3l
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